DocumentCode
2220575
Title
Fabrication and characteristics of a Si multiple-quantum dots single electron transistor on SIMOX substrate
Author
Lu, Gang ; Wan, Jiannong ; Ge, Weikun ; Mao, Shengchun ; Chen, Zhiming
Author_Institution
Dept. of Phys., Hong Kong Univ. of Sci. & Technol., Kowloon, China
Volume
2
fYear
2001
fDate
22-25 Oct. 2001
Firstpage
1408
Abstract
We report Si-based multiple-quantum dots single electron transistors (SETs) on p-type SIMOX substrates, based on electron beam (EB) lithography and reactive ion etching (RIE) processes. These processes offer controlled fabrication of the quantum wires (QWs) and quantum dots (QDs). Coulomb blockade and single electron tunneling are observed in the SETs.
Keywords
Coulomb blockade; electron beam lithography; elemental semiconductors; nanotechnology; semiconductor quantum dots; silicon; single electron transistors; sputter etching; Coulomb blockade; SET; Si; electron beam lithography; fabrication processes; multiple-quantum dots; p-type SIMOX substrates; quantum dots; quantum wires; reactive ion etching; single electron transistor; single electron tunneling; Etching; Fabrication; Lithography; Oxidation; Quantum dots; Single electron transistors; Substrates; Temperature; US Department of Transportation; Wire;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN
0-7803-6520-8
Type
conf
DOI
10.1109/ICSICT.2001.982166
Filename
982166
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