Linear response model of Si single electron transistor

A linear response model of a Si single electron transistor (Si-SET) is studied. The Coulomb island of the Si-SET with a discrete level spectrum is weakly coupled to two electron reservoirs via nanotunneling junction barriers. The reservoirs, named source and drain electrodes respectively, are taken to be in thermal equilibrium at temperature T and Fermi energy E_F. The Si-SET is considered to be driven in linear response, i.e., the conductance G is defined as G = I/V in the limit V tends to 0. We analyze the conductance characteristics of the Si-SET, which make it possible to simulate circuit characteristics of the Si-SET from physical parameters.