DocumentCode :
2220606
Title :
Single electron memory effect in TiOx nano-structure
Author :
Yin, Y. ; Jiang, J.F. ; Cai, Q.Y. ; Huang, P. ; Shen, B. ; Chen, Z.C. ; Yang, T.
Author_Institution :
Res. Inst. of Micro/Nano Sci. & Technol., Shanghai Jiao Tong Univ., China
Volume :
2
fYear :
2001
fDate :
22-25 Oct. 2001
Firstpage :
1415
Abstract :
The single electron memory effect in TiOx nanostructure (thickness 3nm, length 150 nm and width 150 nm) based on localized density of state (LDOS) in metallic oxides is observed. The potential of application in the single electron memory is discussed.
Keywords :
Coulomb blockade; electronic density of states; localised states; titanium compounds; 150 nm; 3 nm; LDOS; TiO2; TiOx nano-structure; localized density of states; single electron memory effect; Circuits; Electrical resistance measurement; Electrodes; Nanostructures; Resins; Single electron memory; Sociotechnical systems; Spectroscopy; Threshold voltage; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
Type :
conf
DOI :
10.1109/ICSICT.2001.982168
Filename :
982168
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2220606
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