Title :
Charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure
Author :
Yang, H.G. ; Shi, Y. ; Wu, J. ; Zhao, B. ; Zhao, L.Q. ; Yuan, X.L. ; Gu, S.L. ; Zhang, R. ; Shen, B. ; Han, P. ; Zheng, Y.D.
Author_Institution :
Dept. of Phys., Nanjing Univ., China
Abstract :
The simulation and experimental measurement of the charge storage characteristics in Ge/Si hetero-nanocrystals based MOS memory structure have been performed. Owing to the Ge/Si hetero-energy bands, comparing with Si nanocrystal memory, the retention time increases remarkably. The trade-off between the speed programming and the long retention could be solved efficiently, and the performance of the device is substantially improved.
Keywords :
MIS structures; MOS memory circuits; elemental semiconductors; germanium; nanoelectronics; nanostructured materials; semiconductor storage; silicon; Ge-Si; Ge/Si hetero-energy bands; Ge/Si hetero-nanocrystals; MOS memory structure; charge storage characteristics; retention time; speed programming; Charge measurement; Current measurement; Hetero-nanocrystal memory; Logic circuits; Logic programming; Nanocrystals; Solids; Tunneling; Very large scale integration; Writing;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982169
