DocumentCode
2220821
Title
A versatile monolithic RF amplifier using a dielectrically isolated monolithic microwave integrated circuit (DIMMIC)
Author
Bachert, P. ; McCombs, M. ; Sanders, P.
Author_Institution
Motorola, Phoenix, AZ, USA
fYear
1988
fDate
12-13 Sep 1988
Abstract
A new RF integrated-circuit technology is described that overcomes the drawbacks of currently available integrated processes. This DIMMIC technology draws its advantage from its dielectric isolation, which minimizes parasitic substrate capacitance, and from its lack of increased collector resistance. Using this technology, a medium-power RF amplifier was built that reduced parts count and size significantly over its discrete counterpart without sacrificing performance
Keywords
MMIC; bipolar integrated circuits; integrated circuit technology; radiofrequency amplifiers; DIMMIC technology; RF integrated-circuit technology; bipolar circuit; collector resistance; dielectrically isolated monolithic microwave integrated circuit; medium-power RF amplifier; monolithic RF amplifier; parasitic substrate capacitance; Capacitance; Circuit testing; Dielectric substrates; Isolation technology; Microwave integrated circuits; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1988., Proceedings of the 1988
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1988.51090
Filename
51090
Link To Document