Preparation of large area AlN films on silicon and its application to the SOI structure

A large area AlN films were synthesized on Si[100] substrate by ion-beam-enhanced deposition (IBED). Spreading resistance profile (SRP) results suggest that the spreading resistance decreased with the increase of Al evaporation rate. If the evaporation rate of Al is higher than 2.5 Å/s, the quality of AlN film will greatly deteriorate. The spreading resistance of the best quality film deposited at 0.5 Å/s rate of Al was bigger than 10⁸ Ω. X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrometry (SIMS) measurements indicate the formation of AlN films at 0.5 and 1.0 Å/s evaporation rate of Al. With increasing evaporation rate of Al, the ratio of N to Al decreased. When deposited at 0.5 and 1.0 Å/s evaporation rates of Al, the ratio of N to Al was 0.402:1 and 0.250:1, respectively.