Title :
Preparation of high quality amorphous Al2O3 thin film on silicon and its applications
Author :
Wan, Qing ; Zhang, Ninglin ; Wang, Lianwei ; Shen, Qinwo ; Lin, Chenglu
Author_Institution :
State Key Lab. of Functional Mater. for Informatics, Chinese Acad. of Sci., Shanghai, China
Abstract :
Al2O3 thin films were deposited on silicon substrates by high-vacuum electron-beam evaporation method at 650°C. Ferroelectric oxide (Pb(Zr0.52Ti0.48)O3) (PZT) films were prepared on the Al2O3 buffer layer by pulsed laser deposition (PLD) method at 350°C and rapid thermal annealing (RTA) at 650°C. X-ray diffraction (XRD), X-ray photoelectron spectroscopes (XPS) and atomic force microscopy (AFM) results show that high quality amorphous Al2O3 could be obtained even at temperature as high as 650°C. XRD result also indicates that highly [101]-oriented perovskite PZT can be obtained on the above mentioned Al2O3 buffer layer.
Keywords :
X-ray diffraction; X-ray photoelectron spectra; alumina; amorphous state; atomic force microscopy; ferroelectric materials; ferroelectric thin films; lead compounds; rapid thermal annealing; vacuum deposited coatings; 350 degC; 650 degC; AFM; Al2O3 buffer layer; PLD; PZT; RTA; Si; Si-Al2O3-PbZrO3TiO3; Si-Al2O3-PZT; X-ray diffraction; X-ray photoelectron spectroscopy; XPS; XRD; amorphous Al2O3 thin film; atomic force microscopy; high-vacuum electron-beam evaporation; pulsed laser deposition; rapid thermal annealing; silicon substrates; Amorphous materials; Atomic force microscopy; Buffer layers; Ferroelectric films; Ferroelectric materials; Pulsed laser deposition; Semiconductor thin films; Silicon; Sputtering; X-ray scattering;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982181
