Title :
Preparation and properties of B2O3/ZnO/SiO2 film electret based on silicon
Author :
Xiangyang, Hunag ; Zheng, Xu ; Zhiqiang, Hunag ; Yu Jianqun
Author_Institution :
Sch. of Mater. Sci. & Eng., Tongji Univ., Shanghai, China
Abstract :
B2O3-ZnO-SiO2 was a new kind of amorphous composite film based on B2O3 net structure and Zn2+ ions doping. The ratio of B2O3, ZnO and SiO2 was 25:65:10 (wt%). This new film material was made by a special procedure which mainly divided into three parts: melting, electrophoresis and heat treatment. The film materials processed electret properties, its trap mechanism of charge capture and storage was stable. This paper provided a new method to prepare the film electret, but the procedure should be improved to get better film electret.
Keywords :
amorphous state; boron compounds; dielectric thin films; electrets; electrophoresis; heat treatment; melting; silicon compounds; zinc compounds; B2O3; B2O3-ZnO-SiO2; B2O3-ZnO-SiO2 film electret; Si; SiO2; ZnO; amorphous composite film; charge capture trap mechanism; electrophoresis; heat treatment; melting; Electrets; Glass; Material storage; Polymer films; Powders; Semiconductor films; Silicon; Surface charging; Temperature; Zinc oxide;
Conference_Titel :
Solid-State and Integrated-Circuit Technology, 2001. Proceedings. 6th International Conference on
Print_ISBN :
0-7803-6520-8
DOI :
10.1109/ICSICT.2001.982182
