Title :
Analogue design techniques for high speed GaAs operational amplifiers
Author :
Toumazou, C. ; Haigh, D.G.
Author_Institution :
Dept. of Electr. Eng., Imperial Coll., London, UK
Abstract :
A voltage-following current mirror is shown to be a useful building block in the design of both single stage, high gain cascade amplifiers and differential to single-ended converters using n-channel depletion-mode GaAs MESFETs. After reviewing past work on such single-stage amplifiers and converters, the authors describe their combination to realize high gain, differential input, operational amplifiers. Performance results are presented
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; operational amplifiers; GaAs; MESFETs; converters; differential input; high gain cascade amplifiers; n-channel depletion-mode; operational amplifiers; voltage-following current mirror; Differential amplifiers; Driver circuits; Educational institutions; Gallium arsenide; Impedance; MESFETs; Mirrors; Operational amplifiers; Signal processing; Voltage;
Conference_Titel :
Circuits and Systems, 1988., IEEE International Symposium on
Conference_Location :
Espoo
DOI :
10.1109/ISCAS.1988.15203
