DocumentCode
2221628
Title
Entangled exciton states in quantum dot molecules
Author
Bayer, Manfred
Author_Institution
Phys. Inst., Wurzburg Univ., Germany
fYear
2002
fDate
19-24 May 2002
Firstpage
10
Lastpage
11
Abstract
Summary form only given. We present spectroscopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of creating an optically driven quantum gate. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states.
Keywords
III-V semiconductors; excitons; gallium arsenide; indium compounds; optical computing; quantum gates; quantum optics; self-assembly; semiconductor quantum dots; InAs-GaAs; coherent carrier tunneling; entangled exciton states; excitonic recombination spectrum; optically driven quantum gate; quantum dot molecules; separating barrier; single self-assembled InAs/GaAs quantum dot molecules; spectroscopic studies; Excitons; Gallium compounds; Indium compounds; Optical computing; Quantum dots;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location
Long Beach, CA, USA
Print_ISBN
1-55752-708-3
Type
conf
DOI
10.1109/QELS.2002.1031018
Filename
1031018
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