DocumentCode :
2221628
Title :
Entangled exciton states in quantum dot molecules
Author :
Bayer, Manfred
Author_Institution :
Phys. Inst., Wurzburg Univ., Germany
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
10
Lastpage :
11
Abstract :
Summary form only given. We present spectroscopic studies of single self-assembled InAs/GaAs quantum dot molecules that support the feasibility of creating an optically driven quantum gate. The evolution of the excitonic recombination spectrum with varying separation between the dots allows us to demonstrate coherent tunneling of carriers across the separating barrier and the formation of entangled exciton states.
Keywords :
III-V semiconductors; excitons; gallium arsenide; indium compounds; optical computing; quantum gates; quantum optics; self-assembly; semiconductor quantum dots; InAs-GaAs; coherent carrier tunneling; entangled exciton states; excitonic recombination spectrum; optically driven quantum gate; quantum dot molecules; separating barrier; single self-assembled InAs/GaAs quantum dot molecules; spectroscopic studies; Excitons; Gallium compounds; Indium compounds; Optical computing; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
Type :
conf
DOI :
10.1109/QELS.2002.1031018
Filename :
1031018
Link To Document :
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