DocumentCode
2221788
Title
Status and trends in power semiconductor devices
Author
Blackburn, David L.
Author_Institution
Nat. Inst. of Stand. & Technol., Gaithersburg, MD, USA
fYear
1993
fDate
15-19 Nov 1993
Firstpage
619
Abstract
A brief description of some developments that affect the application of power semiconductor devices is given. Developments in `chips´, packages, simulation, and new materials are included
Keywords
bipolar integrated circuits; insulated gate field effect transistors; metal-insulator-semiconductor devices; packaging; power electronics; power integrated circuits; power transistors; semiconductor devices; chips; materials; packages; power semiconductor devices; simulation; Circuit simulation; Insulated gate bipolar transistors; NIST; Packaging; Power generation economics; Power semiconductor devices; Power system economics; Semiconductor materials; Silicon; Thyristors;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on
Conference_Location
Maui, HI
Print_ISBN
0-7803-0891-3
Type
conf
DOI
10.1109/IECON.1993.339117
Filename
339117
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