Title :
The transition from integrability to chaos in near-infrared semiconductor microdisk lasers
Author :
Narimanov, Evgenii ; Gmach ; Capasso, Federico ; Baillargeon ; Cho, Andrew Y.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
Summary form only given. The structure of our lasers consisted of a single Ga/sub 0.82/In/sub 0.18/As quantum well embedded in a GaAs/Ga/sub 0.5/In/sub 0.49/P waveguide grown on GaAs substrate by molecular beam epitaxy (MBE). The primary objective of the present work is the study of this fundamental phenomenon and, specifically, its manifestations in the lasing spectra.
Keywords :
gallium arsenide; indium compounds; infrared sources; molecular beam epitaxial growth; optical chaos; quantum well lasers; waveguide lasers; Ga/sub 0.82/In/sub 0.18/As; Ga/sub 0.82/In/sub 0.18/As quantum well; GaAs-Ga/sub 0.5/In/sub 0.49/P; GaAs/Ga/sub 0.5/In/sub 0.49/P waveguide; MBE; lasing spectra; molecular beam epitaxy; near-infrared semiconductor microdisk lasers; Chaos; Epitaxial growth; Gallium compounds; Indium compounds; Quantum well lasers; Waveguide lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031034
