• DocumentCode
    2222142
  • Title

    Design features for polysilicon high pressure transducers

  • Author

    Gridchin, V.A. ; Grischenko, V.V. ; Lubimsky, V.M. ; Shaporin, A.V. ; Lee, J.H.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    147
  • Lastpage
    150
  • Abstract
    In this experimental work, polysilicon pressure transducers are designed with pressure-sensitive elements and applied for pressure over 5 MPa. To determine the magnitude of mechanical stress in the diaphragm, we defined gauge factors from longitudinal and transverse piezoresistors on console beam made from the same wafer as the diaphragm. Also, we modeled mechanical stress in the diaphragm by the finite element method (FEM) by taking into account not only the uniformly distributed load on the plate of diaphragm, but also the load on the lateral side of the diaphragm. The comparison of the calculated mechanical stress with the experimentally defined stress has shown a coincidence within 20% error bound
  • Keywords
    diaphragms; elemental semiconductors; finite element analysis; piezoelectric semiconductors; piezoresistive devices; pressure transducers; silicon; Si; console beam; diaphragm; finite element method; high pressure transducers; longitudinal piezoresistors; mechanical stress; polysilicon; pressure-sensitive elements; transverse piezoresistors; uniformly distributed load; Anisotropic magnetoresistance; Etching; Mechanical sensors; Oxidation; Piezoresistance; Piezoresistive devices; Resistors; Stress; Structural beams; Transducers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    0-7803-6743-X
  • Type

    conf

  • DOI
    10.1109/MEMIA.2001.982339
  • Filename
    982339