DocumentCode
2222142
Title
Design features for polysilicon high pressure transducers
Author
Gridchin, V.A. ; Grischenko, V.V. ; Lubimsky, V.M. ; Shaporin, A.V. ; Lee, J.H.
Author_Institution
Novosibirsk State Tech. Univ., Russia
fYear
2001
fDate
2001
Firstpage
147
Lastpage
150
Abstract
In this experimental work, polysilicon pressure transducers are designed with pressure-sensitive elements and applied for pressure over 5 MPa. To determine the magnitude of mechanical stress in the diaphragm, we defined gauge factors from longitudinal and transverse piezoresistors on console beam made from the same wafer as the diaphragm. Also, we modeled mechanical stress in the diaphragm by the finite element method (FEM) by taking into account not only the uniformly distributed load on the plate of diaphragm, but also the load on the lateral side of the diaphragm. The comparison of the calculated mechanical stress with the experimentally defined stress has shown a coincidence within 20% error bound
Keywords
diaphragms; elemental semiconductors; finite element analysis; piezoelectric semiconductors; piezoresistive devices; pressure transducers; silicon; Si; console beam; diaphragm; finite element method; high pressure transducers; longitudinal piezoresistors; mechanical stress; polysilicon; pressure-sensitive elements; transverse piezoresistors; uniformly distributed load; Anisotropic magnetoresistance; Etching; Mechanical sensors; Oxidation; Piezoresistance; Piezoresistive devices; Resistors; Stress; Structural beams; Transducers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
Conference_Location
Novosibirsk
Print_ISBN
0-7803-6743-X
Type
conf
DOI
10.1109/MEMIA.2001.982339
Filename
982339
Link To Document