Title :
High-frequency application of MOS compact models and their development for scalable RF model libraries
Author :
Pehlke, D.R. ; Schröter, M. ; Burstein, A. ; Matloubian, M. ; Chang, M.F.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
Abstract :
The evaluation of MOS compact models, focusing on BSIM3v3, is performed with specific development described toward scalable RF libraries suitable for high-frequency mixed-signal circuit design. Additional parasitic elements are added to the compact model to better describe its operation at higher frequency. This extrinsic subcircuit includes the gate resistance and complex substrate admittance which are scalable and physically based, and a detailed parameter extraction procedure for each is described. Small-signal y-parameters and noise behavior of the extended model are used to verify the match to high-frequency on-wafer measurements
Keywords :
CMOS integrated circuits; MOSFET; UHF field effect transistors; UHF integrated circuits; field effect MMIC; integrated circuit design; integrated circuit modelling; integrated circuit noise; microwave field effect transistors; mixed analogue-digital integrated circuits; semiconductor device models; semiconductor device noise; BSIM3v3; HF mixed-signal circuit design; MOS compact models; complex substrate admittance; extrinsic subcircuit; gate resistance; high-frequency application; noise behavior; parameter extraction procedure; parasitic elements; scalable RF model libraries; small-signal y-parameters; Admittance; CMOS process; Capacitance; Circuit synthesis; Electrical resistance measurement; Integrated circuit modeling; Libraries; Parameter extraction; Radio frequency; Semiconductor device modeling;
Conference_Titel :
Custom Integrated Circuits Conference, 1998. Proceedings of the IEEE 1998
Conference_Location :
Santa Clara, CA
Print_ISBN :
0-7803-4292-5
DOI :
10.1109/CICC.1998.694967
