Title :
High-resistance thick silicon epitaxial layers
Author :
Ivancheva, Weselka ; Rahnev, Pavlik ; Letskovska, Silviya ; Seymenliyski, Kamen ; Tzanev, Tzanko
Author_Institution :
Departmen - Sliven, Tech. Univ., Sofia, Bulgaria
Abstract :
The development and introduction of powerful high-voltage diodes and transistors, p-i-n diodes, photodiodes, avalanche diodes and other devices require silicon epitaxial layers with high resistance and large thickness, smooth surfaces and a considerable extent of crystallographic perfection, i.e. a minimal number of structural defects. CVD appears to be the most suitable technology for obtaining such layers
Keywords :
power transistors; semiconductor diodes; semiconductor epitaxial layers; semiconductor growth; vapour phase epitaxial growth; CVD; Si; avalanche diodes; crystallographic perfection; high-voltage diodes; high-voltage transistors; p-i-n diodes; photodiodes; semiconductor epitaxial layers; structural defects; Building materials; Conductivity; Epitaxial layers; Impurities; Inductors; Pollution; Power generation; Semiconductor epitaxial layers; Silicon; Surface resistance;
Conference_Titel :
Microwave Electronics: Measurements, Identification, Application Conference, 2001. MEMIA 2001
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-6743-X
DOI :
10.1109/MEMIA.2001.982341
