Field-Emission Diode and Triode Structures Using Self-Assembled Silicon Nanostructure Cathodes

Author

Lansley, S P ; Wu, B. ; Thongpang, S. ; Blaikie, R.J. ; Johnson, S. ; Markwitz, A.

Author_Institution

Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch

fYear

2006

fDate

3-7 July 2006

Abstract

Field emission displays (FEDs) are one of the various technologies being developed for the flat-panel display market. Much recent work has centred on carbon-nanotube-patterned cathodes, however, and alternative technology that is compatible with conventional silicon CMOS processes would be desirable. Self-assembled silicon nanostructures are a possible alternative. Processes for forming diodes and triodes incorporating these nanostructures, along with electrical characterisation data, are presented in this paper.

Keywords

CMOS integrated circuits; carbon nanotubes; diodes; field emission; field emission displays; flat panel displays; nanostructured materials; silicon; triodes; carbon-nanotube-patterned cathodes; field emission displays; field-emission diode; flat-panel display market; self-assembled silicon nanostructure; silicon CMOS processes; triode structures; CMOS technology; Carbon nanotubes; Cathodes; Computer displays; Fabrication; Flat panel displays; Light emitting diodes; Self-assembly; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

1-4244-0452-5

Electronic_ISBN

1-4244-0452-5

Type

conf

DOI

10.1109/ICONN.2006.340619

Filename

4143399