DocumentCode :
2222346
Title :
Field-Emission Diode and Triode Structures Using Self-Assembled Silicon Nanostructure Cathodes
Author :
Lansley, S P ; Wu, B. ; Thongpang, S. ; Blaikie, R.J. ; Johnson, S. ; Markwitz, A.
Author_Institution :
Dept. of Electr. & Comput. Eng., Canterbury Univ., Christchurch
fYear :
2006
fDate :
3-7 July 2006
Abstract :
Field emission displays (FEDs) are one of the various technologies being developed for the flat-panel display market. Much recent work has centred on carbon-nanotube-patterned cathodes, however, and alternative technology that is compatible with conventional silicon CMOS processes would be desirable. Self-assembled silicon nanostructures are a possible alternative. Processes for forming diodes and triodes incorporating these nanostructures, along with electrical characterisation data, are presented in this paper.
Keywords :
CMOS integrated circuits; carbon nanotubes; diodes; field emission; field emission displays; flat panel displays; nanostructured materials; silicon; triodes; carbon-nanotube-patterned cathodes; field emission displays; field-emission diode; flat-panel display market; self-assembled silicon nanostructure; silicon CMOS processes; triode structures; CMOS technology; Carbon nanotubes; Cathodes; Computer displays; Fabrication; Flat panel displays; Light emitting diodes; Self-assembly; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0452-5
Electronic_ISBN :
1-4244-0452-5
Type :
conf
DOI :
10.1109/ICONN.2006.340619
Filename :
4143399
Link To Document :
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