Title :
Nitride gallium high power integrated heterostructure FETS
Author :
Rakov, Y.N. ; Monchares, N.V. ; Bobrova, T.P. ; Uzelmann, G.F. ; Mjakishev, Y.B. ; Bondareva, T.K. ; Sveshnikov, Y.N.
Author_Institution :
Joint Stock Co. ≪Oktava≫, Novosibirsk, Russia
Abstract :
The heterostructures AlGaN/AlN/GaN, grown on the sapphire substrates, the design of the integrated power HFET and its technology have been developed. HFETs have given the output power 7.57 W/mm, power efficiency (PE = 43.5 %) and power gain 5.6 dB at the frequency of 12 GHz.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave field effect transistors; power HEMT; wide band gap semiconductors; Al2O3; AlGaN-AlN-GaN; efficiency 43.5 percent; frequency 12 GHz; gain 5.6 dB; integrated power HFET; nitride gallium high power integrated heterostructure; sapphire substrates; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Power amplifiers; Substrates;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
