Title :
ALGaN/GaN phemt transistors on SiC substrate
Author :
Antonova, N.E. ; Zemliakov, V.E. ; Krutov, A.V. ; Rebrov, A.S.
Author_Institution :
FSUE RPC “Istok”, Fryazino, Russia
Abstract :
The article concerns the development and practical realization results of AlGaN/GaN transistors on SiC substrate. The measured parameters are presented.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; silicon compounds; AlGaN-GaN; PHEMT transistors; SiC; substrate; Aluminum gallium nitride; Gallium arsenide; Gallium nitride; PHEMTs; Robustness; Silicon carbide;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
