Title :
High Frequency Equivalent Circuit of GaAs Depletion and Enhancement FETs for Large Signal Modelling
Author :
Berroth, M. ; Bosch, R.
Author_Institution :
Fraunhofer Institute for Applied Solid State Physics
Keywords :
Equivalent circuits; FETs; Frequency; Gallium arsenide; Low voltage; MODFET circuits; Physics; Scattering parameters; Solid modeling; Solid state circuits;
Conference_Titel :
Measurement Techniques for Microwave Device Characterization and Modelling, 1990. Digest of Papers. 1990 Workshop on
Conference_Location :
Stuttgart, Germany
DOI :
10.1109/MDCM.1990.666357
