Title :
Use of modified operating mode of gallium arsenid Gunn diodes in the 35–47 GHz millimetre-range generators
Author :
Torkhov, N.A. ; Bozhkov, V.G. ; Perfilev, V.A. ; Zolotov, S.E. ; Petrov, I.V. ; Burmistrova, V.A. ; Kozlova, A.V.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
Impedance and operating temperature of Gunn diodes (GD) used in the modified mode (MM) are the same as in the transit-time mode. The MM may be realized in GD with the thin base layer (L<;1.5μm), where the value of strong field domain equates, or exceeds, the base length. Extended frequency range and high efficiency of GD working in MM have allowed using GD efficiently in the following types of GD generators (GDG): GDG with output frequency Fout=35 GHz (with tuning range 1 GHz) with output power Pout>;120 mW, Ioper=0.5-0.55 A and Uoper=4.5-5 V; GDG with Fout= 37 GHz with Pout>;140 mW, Ioper<;0.7A and Uoper<;6 V; and GDG with Fout=47 GHz with Pout>;100 mW, Ioper=0.5-0.55 A and Uoper=4.5-5 V.
Keywords :
Gunn diodes; III-V semiconductors; gallium arsenide; millimetre wave diodes; GD generators; GaAs; current 0.5 A to 0.55 A; frequency 1 GHz to 47 GHz; gallium arsenide Gunn diodes; millimetre-range generators; modified operating mode; voltage 4.5 V to 5 V; Electronic mail; Gallium arsenide; Generators; Power generation; Semiconductor diodes; Temperature measurement; Tuning;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1