Full-swing complementary BiCMOS logic circuits

Author

Shin, Hyun J. ; Chen, Chih L. ; Johnson, Eric D. ; Taur, Yuan ; Ramaswamy, S. ; Boudon, Gerard

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

229

Lastpage

232

Abstract

Full-swing BiCMOS logic circuits for complementary MOS/bipolar technologies are described. The circuits utilize a complementary emitter-follower driver configuration for efficient driving, switched base-emitter shutting to achieve full swing, and CMOS diodes for base-to-base clamping. The performance of the circuits has been demonstrated in a BiCMOS technology featuring 0.8-μm design rules and a single-poly (poly-emitter) npn-BJT (bipolar junction transistor) with an f_T of 15 GHz. Using an n-well-base substrate-pnp-BJT (f_T≃500 MHz), a gate delay (fan-in=2, fan-out=1) of 232 ps was obtained with a 3.6-V supply. Low-voltage operation has been demonstrated down to 1.4 V

Keywords

BIMOS integrated circuits; integrated circuit technology; integrated logic circuits; 0.8 micron; 15 GHz; 232 ps; 3.6 to 1.4 V; 500 MHz; BiCMOS technology; CMOS diodes; base-to-base clamping; bipolar junction transistor; complementary BiCMOS logic circuits; complementary MOS/bipolar technologies; complementary emitter-follower driver configuration; design rules; efficient driving; fan-in; fan-out; full swing BiCMOS logic circuits; gate delay; low voltage operation; npn-BJT; performance; poly-emitter; polycrystalline Si; switched base-emitter shutting; BiCMOS integrated circuits; CMOS logic circuits; CMOS technology; Clamps; Digital audio players; Diodes; Driver circuits; Logic circuits; MOSFETs; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69498

Filename

69498