• DocumentCode
    2222877
  • Title

    The role of the drain wire in modern foil cable shields

  • Author

    Hoeft, Lothar O. ; Estes, John C.

  • Author_Institution
    BDM Int., Inc., Albuquerque, NM, USA
  • fYear
    1993
  • fDate
    9-13 Aug 1993
  • Firstpage
    16
  • Lastpage
    19
  • Abstract
    Theoretical and experimental analysis of a wide range of shields that combine an electrically thin cylindrical shield with a drain wire/current diverter shows that the surface transfer impedance can be characterized as a solid foil shield in parallel with the impedance of the drain wire. The drain wire/current diverter should be modeled as an inductor and a frequency-dependent resistor in series. The resistance is frequency-dependent because of skin depth effects. Neglecting high-frequency aperture coupling, the surface transfer impedance of a foil shield with drain wire can be characterized in three frequency regimes. At low frequencies, the transfer impedance is determined by the resistance of the drain wire. At intermediate frequencies, the resistance of the drain wire increases due to skin depth and inductive effects. For most cable shields, the skin depth effect will dominate. At higher frequencies, for cable samples that use good (circumferential) shield termination techniques, the surface transfer impedance is determined by the transfer impedance of the foil shield
  • Keywords
    cable sheathing; electric impedance measurement; electromagnetic shielding; transmission line theory; circumferential shield termination; current diverter; drain wire; electrically thin cylindrical shield; foil cable shields; frequency-dependent resistor; higher frequencies; inductive effects; inductor; intermediate frequencies; low frequencies; skin depth effects; solid foil shield; surface transfer impedance; Apertures; Cable shielding; Frequency; Inductors; Resistors; Skin; Solids; Surface impedance; Surface resistance; Wire;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electromagnetic Compatibility, 1993. Symposium Record., 1993 IEEE International Symposium on
  • Conference_Location
    Dallas, TX
  • Print_ISBN
    0-7803-1304-6
  • Type

    conf

  • DOI
    10.1109/ISEMC.1993.473789
  • Filename
    473789