• DocumentCode
    2223033
  • Title

    Integration of Quantum Dot devices by Selective Area Epitaxy

  • Author

    Mokkapati, S. ; Tan, H.H. ; Jagadish, C. ; McBean, K.E. ; Phillips, M.R.

  • Author_Institution
    Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
  • fYear
    2006
  • fDate
    3-7 July 2006
  • Abstract
    The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO2) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; laser tuning; nucleation; quantum dot lasers; quantum well lasers; semiconductor growth; silicon alloys; InAs; InGaAs; integrated optoelectronic devices; nucleation; quantum dot devices; quantum dot laser; quantum well waveguide; selective area epitaxy; Atomic force microscopy; Dielectric substrates; Epitaxial growth; Gallium arsenide; Indium gallium arsenide; Laser theory; Quantum dot lasers; Quantum dots; Quantum well lasers; Transmission electron microscopy;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
  • Conference_Location
    Brisbane, Qld.
  • Print_ISBN
    1-4244-0453-3
  • Electronic_ISBN
    1-4244-0453-3
  • Type

    conf

  • DOI
    10.1109/ICONN.2006.340648
  • Filename
    4143428
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2223033