The Extraction of HEMT Transistor DC Parameters Using the Transistor Electrical Characterization and Analysis Program (TECAP)

Author

Friedrich, R. ; Rhakzar, H.

Author_Institution

Fachhochschule fuer Technik (Esslingen Polytechnic)

fYear

1990

fDate

23-23 April 1990

Firstpage

180

Lastpage

183

Keywords

Equations; HEMTs; Intrusion detection; Laboratories; Microelectronics; Parameter extraction; SPICE; Silicon; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Measurement Techniques for Microwave Device Characterization and Modelling, 1990. Digest of Papers. 1990 Workshop on

Conference_Location

Stuttgart, Germany

Type

DOI

10.1109/MDCM.1990.666361

Filename

666361

Link To Document