Title :
Silicon microcavity based on 1-D photonic bandgap structure
Author :
Serpenguzel, Ali
Author_Institution :
Dept. of Phys., Koc Univ., Istanbul, Turkey
Abstract :
Summary form only given. We have demonstrated that a-SiN/sub x/:H microcavities with DBR mirrors can be successfully realized by PECVD, and can be used for the control of the photoluminescence (PL) in a-SiN/sub x/:H. The PL of the a-SiNx:H is both narrowed and enhanced at the microcavity resonance with respect to the PL of the bulk a-SiNx:H. This narrowing and enhancement of the PL can be understood by the redistribution of the density of optical modes due to the presence of the microcavity. The microcavity narrowing and enhancement of luminescence in a-SiN/sub x/:H opens up a variety of possibilities for optoelectronic applications such as resonant cavity enhanced light emitting diodes.
Keywords :
amorphous state; distributed Bragg reflectors; hydrogen; micro-optics; microcavities; optical multilayers; optical resonators; photoluminescence; photonic band gap; plasma CVD coatings; silicon compounds; spectral line narrowing; 1-D photonic bandgap structure; DBR mirrors; PECVD; PL enhancement; PL narrowing; SiN/sub x/:H; a-SiN/sub x/:H microcavities; microcavity resonance; optical modes; optoelectronic applications; photoluminescence; resonant cavity enhanced light emitting diodes; silicon microcavity; Hydrogen; Optical resonators; Photoluminescence; Plasma CVD; Silicon compounds;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031088
