Title :
Spontaneous emission enhancement of InGaAs quantum dots in 2D photonic crystal microcavities
Author :
Happ ; Klopf ; Avary ; Reithmaier, J.-P. ; Kamp, M. ; Forchel, A. ; Tartakovski ; Bazhenov
Author_Institution :
Technische Phys., Wurzburg Univ., Germany
Abstract :
Summary form only given. We have fabricated waveguide based 2D photonic crystal defect microcavities. At moderate excitation powers below saturation it is possible to observe simultaneously both individual quantum dot emission tines and the cavity modes. Using the different temperature shifts of the quantum dot emission lines and the cavity modes, individual dots can be tuned in and out of resonance with the cavity. Thereby it is possible to control the spontaneous emission rate of individual quantum dots.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microcavities; optical waveguides; photoluminescence; photonic crystals; semiconductor quantum dots; spontaneous emission; 2D frequency domain eigenmode calculation; 2D photonic crystal microcavities; InGaAs; cavity modes; excitation power dependence; inhomogeneously broadened photoluminescence; moderate excitation powers; quantum dots; self-organized dots; spontaneous emission enhancement; Gallium compounds; Indium compounds; Optical waveguides; Photoluminescence; Quantum dots; Spontaneous emission;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031091
