Enhanced spontaneous emission from InAs self-organized quantum dots in a two-dimensional GaAs photonic crystal defect microcavity

Summary form only given. Since the realization that spontaneous emission can be altered by controlling the environment in which the radiating element is placed, efforts have been made to produce sub-micron cavities in order to control the spontaneous emission process in the optical regime. Recently the advent of photonic crystals offers an attractive technique for producing optical microcavities which have been demonstrated successfully by several groups experimentally and theoretically. However in such calculations the radiating source considered is an ideal dipole. We describe the characteristics of the spontaneous emission from InAs/GaAs self-organized quantum dots confined in the photonic crystal microcavity. We also discuss the fabrication of an electrically injected surface emitting photonic crystal microcavity with 1.04 /spl mu/m InGaAs quantum dot active region.