Title :
Extreme frequency characteristics of GaAs-based MESFET for a given geometry
Author :
Kilessa, G.V. ; Asanov, E.E. ; Zuev, S.A.
Author_Institution :
Dept. of Radiophys. & Electron., Tavrida Nat. Univ. n.a. V. I. Vernadsky, Simferopol, Ukraine
Abstract :
The paper presents the basic theoretical principles on which the numerical model of GaAs-based MESFETs is based, and the main characteristics (CVC, response to a rectangular pulse) obtained by the developed model. To increase the productivity of the model, some steps of the calculations were performed on the GPU using NVIDIA CUDA technology.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; geometry; GPU performance; GaAs; MESFET; NVIDIA CUDA technology; geometry; numerical model; Gallium arsenide; Graphics processing unit; Integrated circuit modeling; MESFETs; Mathematical model; Numerical models; Scattering;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
