DocumentCode :
2223343
Title :
A new N-level high voltage inversion system
Author :
Kim, Young-Seok ; Seo, Beom-Seok ; Hyun, Dong-seok
Author_Institution :
Dept. of Electr. Eng., Hanyang Univ., Seoul, South Korea
fYear :
1993
fDate :
15-19 Nov 1993
Firstpage :
1252
Abstract :
This paper deals with a new multi-level high voltage source inverter using GTO thyristors. Recently, a multi-level approach seems to be best suited for implementing high voltage conversion systems because it leads to harmonic reduction and safely deals with high power conversion systems independent of the dynamic switching characteristics of each power semiconductor device. However, a conventional multi-level inverter has some problems; namely voltage unbalance between DC link capacitors and overvoltages across the inner switching devices. Therefore, the authors propose a novel structure of a multilevel inverter in order to improve these problems
Keywords :
invertors; overvoltage; power convertors; power system harmonics; pulse width modulation; safety; switching circuits; thyristor applications; DC link capacitors; GTO thyristors; N-level high voltage inversion system; PWM; VSI; dynamic switching characteristics; harmonic reduction; multi-level; overvoltages; power semiconductor; safety; voltage source inverter; voltage unbalance; Capacitors; Inverters; Lead compounds; Power conversion harmonics; Power semiconductor devices; Power semiconductor switches; Power system harmonics; Surges; Thyristors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Industrial Electronics, Control, and Instrumentation, 1993. Proceedings of the IECON '93., International Conference on
Conference_Location :
Maui, HI
Print_ISBN :
0-7803-0891-3
Type :
conf
DOI :
10.1109/IECON.1993.339246
Filename :
339246
Link To Document :
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