Title :
Influence of the nonlinear bias dependence of the barrier height on measured Schottky-barrier contact parameters
Author :
Bozhkov, V.G. ; Shmargunov, A.V.
Author_Institution :
Sci. Res. Inst. of Semicond. Devices, CJSC, Tomsk, Russia
Abstract :
A numerical investigation of current-voltage characteristics (IVCs) of the metal-semiconductor Schottky-barrier contact (SBC) considering the influence of image force and tunneling effects is presented. The analysis is carried out on the basis of a model, taking into account the nonlinear bias dependence of the barrier height.
Keywords :
Schottky barriers; electrical contacts; tunnelling; IVC; Schottky-barrier contact parameter measurement; barrier height; current-voltage characteristic; image force; metal-semiconductor SBC; metal-semiconductor Schottky- barrier contact; nonlinear bias dependence; nonlinear bias dependence influence; numerical investigation; tunneling effect; Doping; Force; Neodymium; Semiconductor device measurement; Temperature distribution; Temperature measurement; Tunneling;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
