Title :
Simulating of double-channel heterotransistor with rectangular quantum wells and quantum dots
Author :
Timofeyev, V.I. ; Faleyeva, E.M.
Author_Institution :
Nat. Tech. Univ. of Ukraine "KPI", Kiev, Ukraine
Abstract :
Simulation results of two-channel four-barrier heterotransistors (HEMT) with quantum dots (QD) are shown. As a result, distributions of velocity, concentration and potential energy surface were obtained.
Keywords :
high electron mobility transistors; semiconductor quantum dots; semiconductor quantum wells; double-channel heterotransistor; energy surface concentration; energy surface potential; rectangular QD; rectangular quantum dot; rectangular quantum well; two-channel four-barrier HEMT; two-channel four-barrier heterotransistor; Electron optics; Electronic mail; Gallium arsenide; Heterojunctions; Phonons; Quantum dots; Transistors;
Conference_Titel :
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-1-4577-0883-1
