Investigation into factors, affecting the control of microstrip transfer line characteristics on a semicondactor substrate

Author

Kopylov, A.F. ; Kopylova, N.A.

Author_Institution

Siberian Fed. Univ., Krasnoyarsk, Russia

fYear

2011

fDate

12-16 Sept. 2011

Firstpage

255

Lastpage

256

Abstract

The results from numerical simulation of the frequency characteristics of the controlled microstrip line on the semiconductor substrate (MLSS) over the 5 to 7 GHz frequency range are presented. This line contains the gallium arsenide or a silicon active layer which changes the electrophysical parameters are reason of control power transmission coefficient through section of MLSS. In this communication the comparison results of numerical simulations of phase-frequency and amplitude-frequency response curves for the power transmission coefficient through the section of MLSS with frequency responses curves of complex constant propagation are presented. We note the disparity between the frequency of phase-frequency and transmission coefficient trends.

Keywords

frequency response; microstrip lines; numerical analysis; power control; substrates; MLSS; amplitude-frequency response curve; complex constant propagation; frequency 5 GHz to 7 GHz; frequency characteristics; gallium arsenide; microstrip transfer line characteristics; numerical simulation; phase-frequency response curve; power transmission coefficient; semiconductor substrate; silicon active layer; Electronic mail; Gallium arsenide; Microstrip; Numerical simulation; Oscillators; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference

Conference_Location

Sevastopol

Print_ISBN

978-1-4577-0883-1

Type

conf

Filename

6068921