DocumentCode
2223505
Title
Efficiency of tunnel frame diodes generation allowing for electrons intervalley transfer in GaAs
Author
Prokhorov, E.D. ; Botsula, O.V. ; Klymenko, O.A.
Author_Institution
Karazin Nat. Univ. of Kharkov, Kharkov, Ukraine
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
257
Lastpage
258
Abstract
The study is based on power and frequency-response characteristics of diodes, in which of certain voltages the NDC (negative differential conductance) occurs between ohmic connections due to electron tunneling through diode´s side edges and due to intervalley transfer of electrons. The ability of generation and frequency multipication using such diodes in the MM-range is shown.
Keywords
III-V semiconductors; gallium arsenide; millimetre wave diodes; tunnel diodes; GaAs; MM-range diode; NDC; diode frequency-response characteristic; diode power response characteristic; diode side edge; electron intervalley transfer; electron tunneling; frequency multipication; negative differential conductance; ohmic connection; tunnel frame diode generation; Cathodes; Electronic mail; Gallium arsenide; Resistance; Semiconductor diodes; Switches; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068922
Link To Document