DocumentCode
2223531
Title
Designing of multimesa impatt diodes MM wave band with minimum parasitic parameters of active structure
Author
Tashilov, A.S. ; Dyshekov, A.A. ; Khapachev, Yu.P. ; Bagov, A.N.
Author_Institution
Kabardino-Balkarian State Univ., Nalchik, Russia
fYear
2011
fDate
12-16 Sept. 2011
Firstpage
259
Lastpage
260
Abstract
The design-oriented technological analysis of the most effective ways of producing multimesa impatt diodes 5 and 3 mm in diameter wave for the continuous operation is carried out. The factors that limit the possibilities of further growth in output power and efficiency are defined. The variant of multimesa impatt diodes with a large number of the mesastructures is defined under the minimum influence of parasitic parameters.
Keywords
IMPATT diodes; millimetre wave diodes; design-oriented technological analysis; mesastructure number; minimum parasitic parameter; multimesa IMPATT diode MM-wave band; wavelength 3 mm; wavelength 5 mm; Electrodes; Gallium; Microwave devices; Millimeter wave technology; Power combiners; Power generation; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave and Telecommunication Technology (CriMiCo), 2011 21th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-1-4577-0883-1
Type
conf
Filename
6068923
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