Designing of multimesa impatt diodes MM wave band with minimum parasitic parameters of active structure

The design-oriented technological analysis of the most effective ways of producing multimesa impatt diodes 5 and 3 mm in diameter wave for the continuous operation is carried out. The factors that limit the possibilities of further growth in output power and efficiency are defined. The variant of multimesa impatt diodes with a large number of the mesastructures is defined under the minimum influence of parasitic parameters.