DocumentCode :
2223693
Title :
Photonic band gap materials: a semiconductor for light
Author :
John, S.
Author_Institution :
Dept. of Phys., Toronto Univ., Ont., Canada
fYear :
2002
fDate :
19-24 May 2002
Firstpage :
73
Lastpage :
74
Abstract :
Summary form only given. I review and discuss the role of three-dimensional light localization in the development of integrated optics on a photonic crystal micro-chip. The control and selective inhibition of spontaneous emission in a three dimensional photonic band gap material offers the possibility of developing novel active devices on such a chip.
Keywords :
integrated optics; photonic band gap; photonic crystals; spontaneous emission; active devices; integrated optics; photonic band gap materials; photonic crystal microchip; spontaneous emission; three dimensional photonic band gap; three-dimensional light localization; Integrated optics; Spontaneous emission;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
Type :
conf
DOI :
10.1109/QELS.2002.1031113
Filename :
1031113
Link To Document :
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