DocumentCode
2223724
Title
GaN Power Transistors in Narrow and Wide Bandwidth Applications
Author
Wright, Paul ; Lees, J. ; Tasker, P.J. ; Benedikt, J.
Author_Institution
Cardiff Sch. of Eng., Cardiff Univ., Cardiff
fYear
2008
fDate
7-7 May 2008
Firstpage
1
Lastpage
1
Abstract
An active load-pull based investigation was conducted into the achievable performance of a 10 W gallium nitride (GaN) HEMT whilst operating in both narrow and wide bandwidth applications. It was found that a minimum efficiency of 40% was obtained over a broad bandwidth whilst delivering a constant output power of 10 W with the device biased in a class-AB mode. Conversely, in a narrow-band, high efficiency inverse class-F mode very high performance in terms of output power (12 W) and efficiency (81% PAE) has been measured. This has demonstrated the significant benefits in terms of the versatility of GaN devices for current and future PA applications.
Keywords
III-V semiconductors; gallium arsenide; high electron mobility transistors; power transistors; wide band gap semiconductors; GaN; GaN HEMT; GaN power transistors; active load-pull; gallium nitride; inverse class-F mode; minimum efficiency; narrow bandwidth application; wide bandwidth application;
fLanguage
English
Publisher
iet
Conference_Titel
Wideband Receivers and Components, 2008 IET Seminar on
Conference_Location
London
ISSN
0537-9989
Print_ISBN
978-0-86341-919-5
Type
conf
Filename
4570846
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