Title :
Very low threshold photonic band edge lasers from free-standing triangular photonic crystal slabs
Author :
Han-Youl Ryu ; Soon-Hong Kwon ; Yong-Jae Lee ; Yong-Hee Lee ; Jeong-Soo Kim
Author_Institution :
Dept. of Phys., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
Abstract :
Summary form only given. Recently, two-dimensional photonic crystal lasers without defect cavities have drawn much attention. The operation of theses lasers is based on the enhancement of optical density of states at photonic band edges. Since the refractive index variations of the reported lasers are very small, typically on the order of 0.1, the device size has been larger than (100 /spl mu/m). Here we report photonic band edge lasers formed in a free-standing photonic crystal slab. The effective refractive index variation in the triangular array of air hole patterns is larger than expected. Therefore, large enhancement of photon density of states at band edges is expected.
Keywords :
III-V semiconductors; electronic density of states; gallium arsenide; gallium compounds; indium compounds; optical arrays; photonic band gap; photonic crystals; quantum well lasers; 100 micron; 2D photonic crystal lasers; InGaAsP; InGaAsP quantum wells; air hole patterns; band edges; defect cavities; free-standing photonic crystal slab; free-standing triangular photonic crystal slabs; photon density of states; photonic band edges; triangular array; two-dimensional photonic crystal lasers; very low threshold photonic band edge lasers; Gallium compounds; Indium compounds; Quantum well lasers;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031115