Title :
Enhanced third-order optical nonlinearity of birefringent photonic-crystal porous silicon
Author_Institution :
Moscow State Univ., Russia
Abstract :
Summary form only given. The birefringent porous silicon is prepared by electrochemical etching of Si wafer highly doped with boron ions. Thus we produce such an anisotropic photonic crystal and study its nonlinear optical response and symmetry be means of optical harmonics generation.
Keywords :
birefringence; electrolytic polishing; micro-optics; optical fabrication; optical harmonic generation; photonic crystals; porous semiconductors; silicon; Si; anisotropic photonic crystal; birefringent photonic-crystal porous Si; boron ions; electrochemical etching; enhanced third-order optical nonlinearity; highly doped; nonlinear optical response; optical harmonics generation; symmetry; Birefringence; Optical device fabrication; Optical frequency conversion; Silicon;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031121
