Title :
Growth Mechanism of Truncated Triangular GaAs Nanowires
Author :
Zou, J. ; Wang, H. ; Auchterlonie, G.J. ; Paladugu, M. ; Gao, Y.N. ; Kim, Y. ; Joyce, H.J. ; Gao, Q. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Sch. of Eng. & Centre for Microscopy & Microanalysis, Queensland Univ., Brisbane, Qld.
Abstract :
During the growth of GaAs nanowires on the {111}B GaAs substrate, truncated triangular GaAs nanowires were commonly observed in the bottom region of nanowires. Through detailed structural analysis by electron microscopy, the authors have determined the growth mechanism of truncated triangular GaAs nanowires
Keywords :
MOCVD; gallium arsenide; nanowires; scanning electron microscopy; transmission electron microscopy; SEM; TEM; growth mechanism; lateral growth; metalorganic chemical vapor deposition; structural analysis; truncated triangular nanowires; Chemical vapor deposition; Electron microscopy; Focusing; Gallium arsenide; Gold; Morphology; Nanowires; Scanning electron microscopy; Shape; Transmission electron microscopy;
Conference_Titel :
Nanoscience and Nanotechnology, 2006. ICONN '06. International Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
1-4244-0453-3
Electronic_ISBN :
1-4244-0453-3
DOI :
10.1109/ICONN.2006.340690
