Towards room temperature polariton amplification in semiconductor microcavities

Author

Saba, Mehreen ; Kundermann, S. ; Deveaud, B. ; Ciuti, Cristiano ; Staehli ; Bloch, J. ; Thierry-Mieg, V. ; Andre, R. ; Le Si Dang ; Mura, A. ; Bongiovanni, Giancarlo

Author_Institution

Phys. Dept., Fed. Inst. of Technol., Lausanne, Switzerland

fYear

2002

fDate

19-24 May 2002

Firstpage

99

Abstract

Summary form only given. We show that engineering the sample structure and constituent materials in order to maximize the exciton-photon coupling greatly improves the gain of the amplifier and its operating temperature. We set-up an angle-resolved pump-probe experiment in the reflection geometry, shining on to the sample 250 fs long pulses from a titanium doped sapphire laser. We report peak gain on the weak probe beam of up to 5000 in GaAs-based microcavities and demonstrate that the stimulation effect survives above liquid nitrogen temperatures, up to 120 K.

Keywords

III-V semiconductors; binding energy; excitons; gallium arsenide; high-speed optical techniques; laser beam effects; low-temperature techniques; micro-optics; microcavities; 120 K; 250 fs; GaAs; GaAs-based microcavities; exciton binding energy; exciton-photon coupling; fs long pulses; liquid nitrogen temperatures; peak gain; polariton amplification; pump-probe experiment; reflection geometry; room temperature polariton amplification; semiconductor microcavities; weak probe beam; Excitons; Gallium compounds; Laser radiation effects; Ultrafast optics;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031157

Filename

1031157