Nonequilibrium characteristics of excitonic luminescence

Author

Hoyer, W. ; Koch, S.W. ; Kira, M. ; Brick ; Chatterjee, Saptarshi ; Ell ; Khitrova, G.

Author_Institution

Dept. of Phys. & Material Sci. Center, Philipps-Univ., Marburg, Germany

fYear

2002

fDate

19-24 May 2002

Firstpage

106

Abstract

Summary form only given. GaAs/AlGaAs quantum well structures have been widely used for two-photon induced nonlinear refractive index variation near half the band gap, which is in the optical fiber communication wavelength range. In this paper, we report the novel phenomena of the enhancement of two-photon and three-photon processes in a GaAs/AlGaAs quantum well laser structure due to carrier injection. These multi-photon absorption coefficients increase with injection current.

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; multiphoton processes; nonlinear optics; refractive index; semiconductor quantum wells; two-photon processes; GaAs-AlGaAs; GaAs/AlGaAs quantum well laser structure; GaAs/AlGaAs quantum well structures; carrier injection; injection current; multi-photon absorption coefficients; optical fiber communication wavelength range; three-photon processes; two-photon induced nonlinear refractive index variation; two-photon processes; Aluminum compounds; Gallium compounds; Nonlinear optics; Optical refraction; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031167

Filename

1031167