Title :
Low power design of embedded NOR type FLASH memory module (EFMM)
Author :
Myung-Ok, Mike Lee ; Lee, Seung-Min ; Kim, Young-Min ; Kim, Young-Cheol
Author_Institution :
Dept. of Inf. & Commun. Eng., Dongshin Univ., Chonnam, South Korea
Abstract :
A Novel 40-ns high speed (HS) and 30 mA low power (LP) embedded flash memory modules (EFMM) such as 1 M flash memory cell array, three (4V, 5V, 9V) positive high voltage circuits and -7V negative high voltage circuit plus VHDL-modeled logic sub-systems implemented on 0.25 μm CMOS SLP/5LM technology are presented. It is shown that our EFMM which is being used in multi-cube results in 30 mA active read current and 100 μA standby current. Mixed mode design for analogs-high voltage charge pump shows stable 9V high for programming and further 1.2V bandgap reference voltage interfacing with the high voltage circuits and for logic designs are developed by optimized IP-standard (set by Synopsys) VHDL modeling. Chip size with 56-pin indicates 5.7 mm 2
Keywords :
CMOS memory circuits; NOR circuits; circuit optimisation; flash memories; hardware description languages; high-speed integrated circuits; integrated circuit design; logic CAD; low-power electronics; -7 V; 0.25 micron; 1 Mbit; 1.2 V; 100 muA; 30 mA; 4 to 9 V; 40 ns; CMOS; EFMM; Synopsys; VHDL-modeled logic sub-systems; active read current; bandgap reference voltage; embedded NOR type flash memory module; high speed circuits; high voltage charge pump; low power design; mixed mode design; multi-cube; optimized IP-standard; positive high voltage circuits; standby current; CMOS logic circuits; CMOS memory circuits; CMOS technology; Charge pumps; Flash memory; Flash memory cells; Log periodic antennas; Logic arrays; Logic programming; Voltage;
Conference_Titel :
ASIC, 2001. Proceedings. 4th International Conference on
Conference_Location :
Shanghai
Print_ISBN :
0-7803-6677-8
DOI :
10.1109/ICASIC.2001.982536
