Title :
Enhancement of multi-photon processes with carrier injection in a GaAs/AlGaAs quantum well structure
Author :
Horng-Shyang Chen ; Shun-Lee Liu ; Yang, C.C.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
Summary form only given. We report the novel phenomena of the enhancement of two-photon and three-photon processes in a GaAs/AlGaAs quantum well laser structure due to carrier injection. These multi-photon absorption coefficients increase with injection current. The increased multi-photon absorption coefficients are expected to result in a stronger nonlinear refractive index variation, which might find applications in ultrafast all-optical switching with a lower switching power.
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; multiphoton processes; nonlinear optics; semiconductor quantum wells; two-photon processes; GaAs-AlGaAs; GaAs/AlGaAs quantum well structure; carrier injection; injection current; multi-photon absorption coefficients; multi-photon processes enhancement; nonlinear refractive index variation; three-photon processes; two-photon processes; ultrafast all-optical switching; Aluminum compounds; Gallium compounds; Nonlinear optics; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031168
