Enhancement of multi-photon processes with carrier injection in a GaAs/AlGaAs quantum well structure

Author

Horng-Shyang Chen ; Shun-Lee Liu ; Yang, C.C.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

2002

fDate

19-24 May 2002

Firstpage

106

Lastpage

107

Abstract

Summary form only given. We report the novel phenomena of the enhancement of two-photon and three-photon processes in a GaAs/AlGaAs quantum well laser structure due to carrier injection. These multi-photon absorption coefficients increase with injection current. The increased multi-photon absorption coefficients are expected to result in a stronger nonlinear refractive index variation, which might find applications in ultrafast all-optical switching with a lower switching power.

Keywords

III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; multiphoton processes; nonlinear optics; semiconductor quantum wells; two-photon processes; GaAs-AlGaAs; GaAs/AlGaAs quantum well structure; carrier injection; injection current; multi-photon absorption coefficients; multi-photon processes enhancement; nonlinear refractive index variation; three-photon processes; two-photon processes; ultrafast all-optical switching; Aluminum compounds; Gallium compounds; Nonlinear optics; Quantum wells;

fLanguage

English

Publisher

ieee

Conference_Titel

Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the

Conference_Location

Long Beach, CA, USA

Print_ISBN

1-55752-708-3

Type

conf

DOI

10.1109/QELS.2002.1031168

Filename

1031168