Ultrafast laser processing of semiconductor devices

Author

Carey, J.E. ; Pralle, M.U. ; Vineis, C.J. ; McKee, J. ; Alie, S. ; Sickler, J.W. ; Li, X. ; Jiang, J. ; Miller, D. ; Palsule, C. ; Haddad, H.

Author_Institution

SiOnyx, Inc., Beverly, MA, USA

fYear

2011

fDate

1-6 May 2011

Firstpage

1

Lastpage

1

Abstract

SiOnyx is developing ultrafast laser processing techniques that improve the performance of semiconductor based photodetectors, solar cells, and image sensors. Ultrafast laser processing offers the unique ability to locally engineer the structural and doping characteristics of semiconductor devices and avoid adverse side effects. Ultrafast laser processing is incorporated into a variety of devices to increase the collection of longer wavelength light and improve quantum efficiency while maintaining scalability and CMOS compatibility.

Keywords

CMOS image sensors; doping; high-speed optical techniques; laser beam applications; photodetectors; semiconductor devices; solar cells; CMOS compatibility; devices scalability; doping; image sensors; long wavelength light; quantum efficiency; semiconductor based photodetectors; semiconductor devices; solar cells; structural properties; ultrafast laser processing; Charge coupled devices; Image sensors; Performance evaluation; Photovoltaic cells; Photovoltaic systems; Semiconductor lasers; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics (CLEO), 2011 Conference on

Conference_Location

Baltimore, MD

Print_ISBN

978-1-4577-1223-4

Type

conf

Filename

5950024