Title :
Optical bistability in n-doped GaAs/AlGaAs quantum wells
Author :
Batista ; Citrin, D.S.
Author_Institution :
Sch. of Inf. & Comput. Sci., Georgia Inst. of Technol., Atlanta, GA, USA
Abstract :
Summary form only given. Optical bistability is basically a nonlinear response of the medium (here confined electrons in a QW) to an external oscillating field, in which there are three possible responses (two stable and one unstable). Which one the system chooses depends on the history of the adiabatically varying control parameters (usually electric field amplitude). The OB we consider is an intrinsic feature of the electron gas in the QW, and does not rely on the use of a Fabry-Perot resonator. Another feature of OB is that it is not a ubiquitous nonlinear response such as superharmonic generation; it can be observed only at some restricted values of the parameters. Furthermore the nonlinear response changes abruptly from one value of the output to the other. This effect can be measured by detecting the different transmitted intensities of the FIR field to the same input field. These features of OB make it a relevant choice for applications to optical switching and the realization of optical logic gates.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical bistability; semiconductor quantum wells; FIR field; GaAs-AlGaAs; adiabatically varying control parameters; confined electrons; electric field amplitude; electron gas; external oscillating field; input field; n-doped GaAs/AlGaAs quantum wells; nonlinear response; optical bistability; optical logic gates; optical switching; transmitted intensities; Aluminum compounds; Gallium compounds; Optical bistability; Quantum wells;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031170