Modeling issues for advanced bipolar device/circuit simulation

Author

Fossum, Jerry G.

Author_Institution

Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA

fYear

1989

fDate

18-19 Sep 1989

Firstpage

234

Lastpage

241

Abstract

Physical mechanisms that govern the operation of advanced bipolar transistors (BJTs), but are not represented well in compact circuit (e.g. SPICE) models, are overviewed. Conventional circuit models for BJTs are reviewed to reveal their deficiencies. Then it is shown how the important mechanisms in the advanced BJT can be properly accounted for by seminumerical physical models, based on multilevel Newton-like iterative methods of solving carrier transport, written into the circuit-simulator source code

Keywords

bipolar transistors; circuit CAD; circuit analysis computing; semiconductor device models; BJTs; MMSPICE; SPICE inadequacies; advanced BJT; advanced bipolar device simulation; bipolar transistors; carrier transport; circuit models; circuit-simulator source code; compact circuit models; modelling issues; multilevel Newton-like iterative methods; physical mechanisms; seminumerical physical models; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Design for manufacture; Integrated circuit modeling; Numerical models; Predictive models; SPICE; Silicon; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989

Conference_Location

Minneapolis, MN

Type

conf

DOI

10.1109/BIPOL.1989.69499

Filename

69499