Title :
Modeling issues for advanced bipolar device/circuit simulation
Author :
Fossum, Jerry G.
Author_Institution :
Dept. of Electr. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Physical mechanisms that govern the operation of advanced bipolar transistors (BJTs), but are not represented well in compact circuit (e.g. SPICE) models, are overviewed. Conventional circuit models for BJTs are reviewed to reveal their deficiencies. Then it is shown how the important mechanisms in the advanced BJT can be properly accounted for by seminumerical physical models, based on multilevel Newton-like iterative methods of solving carrier transport, written into the circuit-simulator source code
Keywords :
bipolar transistors; circuit CAD; circuit analysis computing; semiconductor device models; BJTs; MMSPICE; SPICE inadequacies; advanced BJT; advanced bipolar device simulation; bipolar transistors; carrier transport; circuit models; circuit-simulator source code; compact circuit models; modelling issues; multilevel Newton-like iterative methods; physical mechanisms; seminumerical physical models; Bipolar integrated circuits; Bipolar transistors; Circuit simulation; Design for manufacture; Integrated circuit modeling; Numerical models; Predictive models; SPICE; Silicon; Very large scale integration;
Conference_Titel :
Bipolar Circuits and Technology Meeting, 1989., Proceedings of the 1989
Conference_Location :
Minneapolis, MN
DOI :
10.1109/BIPOL.1989.69499
