Title :
Radio proximity Doppler sensor with high K dielectric materials
Author :
Nicolaescu, Ioan ; Radu, Adrian ; Ioachim, Andrei ; Vizitiu, Constantin
Author_Institution :
Dept. of Commun. & Mil. Electron. Syst., Mil. Tech. Acad., Bucharest, Romania
fDate :
Sept. 30 2009-Oct. 2 2009
Abstract :
One of the most important trend in electronic devices manufacturing is miniaturisation. Among other techniques used to decrease the physical dimensions of microwave devices one is to employ materials with high permitivity, providing that the dimension of the device is proportional to the wavelength in the material, which is square effective permittivity times less than the wavelengths in free space. The paper shortly presents the manufacturing process to obtain a high permittivity ZST ((Zr0.8, Sn0.2)TiO4) material used to build a dielectric resonator oscillator, which is used as a proximity Doppler sensor. Computed and experimental results as well as the procedure to measure the parameters of the Doppler sensor are presented. The sensor described in the paper may be considered as a short range radar device.
Keywords :
Doppler radar; electron device manufacture; high-k dielectric thin films; tin compounds; zirconium compounds; Zr0.8Sn0.2TiO4; dielectric resonator oscillator; high K dielectric materials; manufacturing process; permittivity; radio proximity Doppler sensor; short range radar device; Dielectric materials; Dielectric measurements; High K dielectric materials; Manufacturing processes; Microwave devices; Microwave theory and techniques; Oscillators; Permittivity; Tin; Zirconium;
Conference_Titel :
Radar Conference, 2009. EuRAD 2009. European
Conference_Location :
Rome
Print_ISBN :
978-1-4244-4747-3