DocumentCode
2225690
Title
Applications of robust, radiation hard AlGaN optoelectronic devices in space exploration and high energy density physics
Author
Sun, Ke-Xun
Author_Institution
Hansen Exp. Phys. Lab., Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
1-6 May 2011
Firstpage
1
Lastpage
2
Abstract
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes (LEDs) and deep UV Photodiodes, and their applications in space science instruments for AC charge management, and in High Energy Density Physics diagnostics.
Keywords
III-V semiconductors; aerospace instrumentation; aluminium compounds; gallium compounds; integrated optoelectronics; light emitting diodes; photodiodes; radiation hardening (electronics); ultraviolet sources; wide band gap semiconductors; AC charge management; AlGaN; UV LED; UV photodiodes; deep UV light emitting diodes; optoelectronic devices; radiation hardness; space exploration; Aluminum gallium nitride; Light emitting diodes; Photodiodes; Physics; Protons; Robustness; Sun;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location
Baltimore, MD
Print_ISBN
978-1-4577-1223-4
Type
conf
Filename
5950052
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