Title :
Applications of robust, radiation hard AlGaN optoelectronic devices in space exploration and high energy density physics
Author_Institution :
Hansen Exp. Phys. Lab., Stanford Univ., Stanford, CA, USA
Abstract :
We report demonstration of radiation hardness and environmental robustness of AlGaN deep UV Light Emitting Diodes (LEDs) and deep UV Photodiodes, and their applications in space science instruments for AC charge management, and in High Energy Density Physics diagnostics.
Keywords :
III-V semiconductors; aerospace instrumentation; aluminium compounds; gallium compounds; integrated optoelectronics; light emitting diodes; photodiodes; radiation hardening (electronics); ultraviolet sources; wide band gap semiconductors; AC charge management; AlGaN; UV LED; UV photodiodes; deep UV light emitting diodes; optoelectronic devices; radiation hardness; space exploration; Aluminum gallium nitride; Light emitting diodes; Photodiodes; Physics; Protons; Robustness; Sun;
Conference_Titel :
Lasers and Electro-Optics (CLEO), 2011 Conference on
Conference_Location :
Baltimore, MD
Print_ISBN :
978-1-4577-1223-4
