• DocumentCode
    2225712
  • Title

    Development of reliable mW level powers in pseudomorphic ultraviolet light emitting diodes on bulk aluminum nitride substrates

  • Author

    Grandusky, James R. ; Mendrick, Mark C. ; Gibb, Shawn ; Smart, Joseph A. ; Venkatachalam, Anusha ; Graham, Samuel ; Schowalter, Leo J.

  • Author_Institution
    Crystal IS, Green Island, NY, USA
  • fYear
    2011
  • fDate
    1-6 May 2011
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The use of low defect density bulk AlN substrates has led to reliable pseudomorphic ultraviolet light emitting diodes capable of mW level power outputs from packaged devices emitting from 250-275 nm.
  • Keywords
    aluminium compounds; electronics packaging; light emitting diodes; AlN; bulk aluminum nitride substrates; low defect density; mW level powers; packaged devices; pseudomorphic ultraviolet light emitting diodes; wavelength 250 nm to 275 nm; Gold; Imaging; Light emitting diodes; Performance evaluation; Power generation; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2011 Conference on
  • Conference_Location
    Baltimore, MD
  • Print_ISBN
    978-1-4577-1223-4
  • Type

    conf

  • Filename
    5950053
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2225712