Title :
Exciton in-plane transport in ZnSe quantum wells
Author :
Hui Zhao ; Meohl, S. ; Wachter, S. ; Kalt, H.
Author_Institution :
Inst. fur Angewandte Phys., Karlsruhe Univ., Germany
Abstract :
Summary form only given. We investigate the in-plane transport of excitons in ZnSe quantum wells (QWs). The experimental setup is shown. A solid immersion lens (SIL) is introduced into a confocal microphotoluminescence (/spl mu/-PL) system, improving the spatial resolution to 400 nm. The sample is a ZnSe/ZnSSe multiple QWs. The photoluminescence spectrum is composed of a zero-phonon-line and a LO-phonon sideband.
Keywords :
II-VI semiconductors; excitons; lenses; phonons; photoluminescence; semiconductor quantum wells; zinc compounds; LO-phonon sideband; ZnSe quantum wells; ZnSe-ZnSSe; ZnSe/ZnSSe multiple QWs; confocal microphotoluminescence; in-plane exciton transport; solid immersion lens; spatial resolution; zero-phonon-line; Excitons; Lenses; Phonons; Photoluminescence; Quantum wells; Zinc compounds;
Conference_Titel :
Quantum Electronics and Laser Science Conference, 2002. QELS '02. Technical Digest. Summaries of Papers Presented at the
Conference_Location :
Long Beach, CA, USA
Print_ISBN :
1-55752-708-3
DOI :
10.1109/QELS.2002.1031209
